Navitas launches 2,300 V full-bridge SiC module family for megawatt charging and grid storage
By Eve
Navitas Semiconductor has introduced the G4H08MT23GB4 family of 2,300 V full-bridge silicon carbide power modules in the SiCPAK form factor, with an on-resistance of 8 mΩ. The modules use its fourth-generation GeneSiC Trench-Assisted Planar architecture, an aluminium nitride substrate supporting isolation of more than 5 kV, and epoxy-resin potting that Navitas says has 10 times the thermal conductivity of silicone gel. Targeted at solid-state transformers, grid-scale storage, solar inverters and EV megawatt charging, the family will be qualified to AEC-Plus, Navitas's internal benchmark that it says goes beyond AEC-Q101 and JEDEC requirements, as reported on 5 November 2026.
Why it matters
Higher-voltage SiC modules give megawatt charger designers more options for efficiency and power density, which can influence future hardware specifications and supplier shortlists. Buyers should note that AEC-Plus is an internal Navitas benchmark rather than an independent standard, so reliability claims warrant their own due diligence.
Source
- Original title
- “Navitas launches 2,300 V full-bridge SiC module for megawatt charging and grid storage”
- Published
- 5 November 2026
- Updated
- 6 November 2026
In this story
- Topic
- EV Charging
- Place
- Global
- Tag
- Navitas
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